This study investigates the motion and energy distribution of argon ions in a plasma etching reactor. The researchers utilized laser-induced fluorescence (LIF) to measure the ions' velocity and energy distribution in the presence of an RF bias on a silicon wafer. They explored various conditions, including pulsed operation of the inductively coupled plasma (ICP) and the bias, as well as the impact of applying the bias during the plasma afterglow. These findings were then compared to simulations using the Hybrid Plasma Equipment Model (HPEM) code. The study demonstrates the potential for improving etch uniformity by pulsing the ICP and bias independently, particularly when applying the bias during the afterglow.

URLS:

Basic Plasma Science Facility: https://plasma.physics.ucla.edu

Article being discussed: Yuchen Qian, Walter Gekelman, Patrick Pribyl, Tugba Piskin, Alex Paterson; Ion motion above a biased wafer in a plasma etching reactor. Phys. Plasmas 1 June 2024; 31 (6): 063507. https://doi.org/10.1063/5.0206860

The Basic Plasma Science Facility is a Collaborative Research Facility that is primarily funded by the US Department of Energy Fusion Energy Sciences program, with additional funding from the National Science Foundation.